Invention Grant
- Patent Title: Semiconductor device and method for fabricating semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12435485Application Date: 2009-05-05
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Publication No.: US07936070B2Publication Date: 2011-05-03
- Inventor: Yumi Hayashi , Noriaki Matsunaga , Takamasa Usui
- Applicant: Yumi Hayashi , Noriaki Matsunaga , Takamasa Usui
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-129819 20080516
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device includes: a copper (Cu) wire having a first region and a second region in which densities of silicon (Si) and oxygen (O) atoms are higher than in the first region; a compound film that is selectively formed on the Cu wire and contains Cu and Si; and a dielectric film formed on a side surface side of the Cu wire.
Public/Granted literature
- US20090283913A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2009-11-19
Information query
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