Invention Grant
- Patent Title: Semiconductor integrated circuit and method of testing circuit
- Patent Title (中): 半导体集成电路和电路测试方法
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Application No.: US12847859Application Date: 2010-07-30
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Publication No.: US07936179B2Publication Date: 2011-05-03
- Inventor: Hideyuki Tokuno
- Applicant: Hideyuki Tokuno
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-185028 20090807
- Main IPC: H03K19/00
- IPC: H03K19/00 ; G01R31/02

Abstract:
A semiconductor integrated circuit includes: a ladder resistor; a ROM decoder; and a test circuit. The ladder resistor includes a plurality of resistors series-connected to each other and is supplied with a correction voltage at least one of both ends of the series connection and a plurality of connection points in the series connection to generate a plurality of gradation voltages at the plurality of connection points. The ROM decoder selects one of the plurality of gradation voltages generated by the ladder resistor, based on a supplied data signal. The test circuit measures a leakage current in the ROM decoder. The test circuit includes: a plurality of separation units, and a control unit. The plurality of separation units separates the series connection, which is respectively supplied with different power source voltages at both ends, at a certain portion, when the leakage current is measured. The control unit controls separation of the plurality of separation unit corresponding to the data signal.
Public/Granted literature
- US20110031995A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF TESTING CIRCUIT Public/Granted day:2011-02-10
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