Invention Grant
- Patent Title: Temperature sensing circuit
- Patent Title (中): 温度检测电路
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Application No.: US12488133Application Date: 2009-06-19
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Publication No.: US07936204B2Publication Date: 2011-05-03
- Inventor: Jong-Man Im
- Applicant: Jong-Man Im
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0134582 20081226
- Main IPC: G01K7/01
- IPC: G01K7/01 ; H03M1/12 ; G05F3/08
Abstract:
A temperature sensing circuit includes a temperature-dependent voltage generating block configured to generate a plurality temperature-dependent voltages having voltage levels that are changed according to temperature; and a comparing block configured to compare each voltage level of the temperature-dependent voltages with a voltage level of a predetermined voltage to output thermal codes.
Public/Granted literature
- US20100164602A1 TEMPERATURE SENSING CIRCUIT Public/Granted day:2010-07-01
Information query
