Invention Grant
US07936206B2 Transistor junction diode circuitry systems and methods 有权
晶体管结二极管电路系统及方法

  • Patent Title: Transistor junction diode circuitry systems and methods
  • Patent Title (中): 晶体管结二极管电路系统及方法
  • Application No.: US12490317
    Application Date: 2009-06-24
  • Publication No.: US07936206B2
    Publication Date: 2011-05-03
  • Inventor: Wai Lim Ngai
  • Applicant: Wai Lim Ngai
  • Applicant Address: US CA San Diego
  • Assignee: Entropic Communications, Inc.
  • Current Assignee: Entropic Communications, Inc.
  • Current Assignee Address: US CA San Diego
  • Agent Bruce W. Greenhaus
  • Main IPC: H03K3/01
  • IPC: H03K3/01
Transistor junction diode circuitry systems and methods
Abstract:
Methods and apparatus for capacitive voltage division are provided, an example apparatus having an input and an output and including a first switched capacitor circuit. In some embodiments, the capacitive voltage divider includes first and second MOSFETs. A first capacitor is coupled between the drain of the first MOSFET and the input to the capacitive voltage divider. A first circuit coupled to the drain of the first MOSFET is configured to pull down the drain of the first MOSFET and thus apply a reverse bias to a first junction diode internal to the first MOSFET between the drain and the bulk of the first MOSFET. A second capacitor is coupled between the source of the first MOSFET and the drain of the second MOSFET. A second circuit is configured to reverse bias a second junction diode between the drain and bulk of the second MOSFET.
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