Invention Grant
- Patent Title: Transistor junction diode circuitry systems and methods
- Patent Title (中): 晶体管结二极管电路系统及方法
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Application No.: US12490317Application Date: 2009-06-24
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Publication No.: US07936206B2Publication Date: 2011-05-03
- Inventor: Wai Lim Ngai
- Applicant: Wai Lim Ngai
- Applicant Address: US CA San Diego
- Assignee: Entropic Communications, Inc.
- Current Assignee: Entropic Communications, Inc.
- Current Assignee Address: US CA San Diego
- Agent Bruce W. Greenhaus
- Main IPC: H03K3/01
- IPC: H03K3/01

Abstract:
Methods and apparatus for capacitive voltage division are provided, an example apparatus having an input and an output and including a first switched capacitor circuit. In some embodiments, the capacitive voltage divider includes first and second MOSFETs. A first capacitor is coupled between the drain of the first MOSFET and the input to the capacitive voltage divider. A first circuit coupled to the drain of the first MOSFET is configured to pull down the drain of the first MOSFET and thus apply a reverse bias to a first junction diode internal to the first MOSFET between the drain and the bulk of the first MOSFET. A second capacitor is coupled between the source of the first MOSFET and the drain of the second MOSFET. A second circuit is configured to reverse bias a second junction diode between the drain and bulk of the second MOSFET.
Public/Granted literature
- US20100277230A1 TRANSISTOR JUNCTION DIODE CIRCUITRY SYSTEMS AND METHODS Public/Granted day:2010-11-04
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