Invention Grant
- Patent Title: I/O buffer with low voltage semiconductor devices
- Patent Title (中): 具有低电压半导体器件的I / O缓冲器
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Application No.: US12428556Application Date: 2009-04-23
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Publication No.: US07936209B2Publication Date: 2011-05-03
- Inventor: Dipankar Bhattacharya , Makeshwar Kothandaraman , John Kriz , Jeffrey Nagy , Yehuda Smooha , Pankaj Kumar
- Applicant: Dipankar Bhattacharya , Makeshwar Kothandaraman , John Kriz , Jeffrey Nagy , Yehuda Smooha , Pankaj Kumar
- Applicant Address: US CA Milpitas
- Assignee: LSI Corporation
- Current Assignee: LSI Corporation
- Current Assignee Address: US CA Milpitas
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02

Abstract:
Described embodiments provide for protecting from DC and transient over-voltage conditions an input/output (“I/O”) buffer having first and second I/O transistors. The first I/O transistor is coupled to a first over-voltage protection circuit adapted to prevent an over-voltage condition on at least the first I/O transistor. The second I/O transistor is coupled to a second over-voltage protection circuit adapted to prevent an over-voltage condition on at least the second I/O transistor. First and second bias voltages are generated from an operating voltage of the buffer. A third bias voltage is generated from either i) the first bias voltage, or ii) an output signal voltage of the buffer and a fourth bias voltage is generated from either i) the second bias voltage, or ii) the output signal voltage of the buffer. The third and fourth bias voltages are provided to the first and second over-voltage protection circuits, respectively.
Public/Granted literature
- US20100271118A1 I/O Buffer with Low Voltage Semiconductor Devices Public/Granted day:2010-10-28
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