Invention Grant
US07936240B2 Lithographically controlled curvature for MEMS devices and antennas
有权
用于MEMS器件和天线的光刻控制曲率
- Patent Title: Lithographically controlled curvature for MEMS devices and antennas
- Patent Title (中): 用于MEMS器件和天线的光刻控制曲率
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Application No.: US12189782Application Date: 2008-08-11
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Publication No.: US07936240B2Publication Date: 2011-05-03
- Inventor: Sae Won Lee , Daniel Elliot Sameoto , Meenakshinathan Ash Parameswaran , Alireza Mahanfar , Rodney Grant Vaughan
- Applicant: Sae Won Lee , Daniel Elliot Sameoto , Meenakshinathan Ash Parameswaran , Alireza Mahanfar , Rodney Grant Vaughan
- Applicant Address: CA Burnaby, British Columbia
- Assignee: Simon Fraser University
- Current Assignee: Simon Fraser University
- Current Assignee Address: CA Burnaby, British Columbia
- Agency: Oyen Wiggs Green & Mutala LLP
- Main IPC: H01H51/22
- IPC: H01H51/22

Abstract:
Lithographically fabricated apparatus are provided. The apparatus are capable of self-assembly to extend at least in part in an out-of-plane direction. A cantilever arm is anchored to a substrate at one of its ends and fabricated to provide a cantilever portion that extends from the anchor in a longitudinal direction generally parallel to the substrate, One or more posts are fabricated atop the cantilever portion. The posts shrink from a first volume to a second volume, less than the first volume, during fabrication thereof. The change in volume of the post from the first volume to the second volume causes stress between the post and the cantilever arm resulting in the cantilever portion bending from an in-plane orientation extending in the longitudinal direction to a self-assembled orientation extending at least in part in an out-of-plane direction away from the substrate.
Public/Granted literature
- US20090046018A1 LITHOGRAPHICALLY CONTROLLED CURVATURE FOR MEMS DEVICES AND ANTENNAS Public/Granted day:2009-02-19
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