Invention Grant
- Patent Title: Stacked structure of a spiral inductor
- Patent Title (中): 螺旋电感器的堆叠结构
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Application No.: US12773024Application Date: 2010-05-04
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Publication No.: US07936245B2Publication Date: 2011-05-03
- Inventor: Kai-Yi Huang , Yuh-Sheng Jean , Ta-Hsun Yeh
- Applicant: Kai-Yi Huang , Yuh-Sheng Jean , Ta-Hsun Yeh
- Applicant Address: TW Science Park, HsinChu
- Assignee: Realtek Semiconductor Corp.
- Current Assignee: Realtek Semiconductor Corp.
- Current Assignee Address: TW Science Park, HsinChu
- Agent Winston Hsu; Scott Margo
- Priority: TW98116543A 20090519
- Main IPC: H01F5/00
- IPC: H01F5/00

Abstract:
A stacked structure of a spiral inductor includes a first metal layer, a second metal layer, a first set of vias, and a second set of vias. The first metal layer includes a first segment, a second segment, and a third segment, wherein the layout direction of the third segment is different from the layout direction of the first and second segments. The second metal layer includes a fourth segment, a fifth segment, and a sixth segment connected to the fifth segment, wherein the layout direction of the sixth segment is different from the layout direction of the fourth and fifth segments. The first set of vias connects the first and fourth segments, and they construct a first shunt winding. The second set of vias connects the second and fifth segments, and they construct a second shunt winding. The third and sixth segments construct a crossover region.
Public/Granted literature
- US20100295648A1 STACKED STRUCTURE OF A SPIRAL INDUCTOR Public/Granted day:2010-11-25
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