Invention Grant
- Patent Title: On-chip inductor for high current applications
- Patent Title (中): 用于大电流应用的片上电感
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Application No.: US11973536Application Date: 2007-10-09
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Publication No.: US07936246B2Publication Date: 2011-05-03
- Inventor: Peter J. Hopper , Peter Smeys , Andrei Papou
- Applicant: Peter J. Hopper , Peter Smeys , Andrei Papou
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Dergosits & Noah LLP
- Main IPC: H01F27/24
- IPC: H01F27/24

Abstract:
Saturation of nonlinear ferromagnetic core material for on-chip inductors for high current applications is significantly reduced by providing a core design wherein magnetic flux does not form a closed loop, but rather splits into multiple sub-fluxes that are directed to cancel each other. The design enables high on-chip inductance for high current power applications.
Public/Granted literature
- US20090091414A1 On-chip inductor for high current applications Public/Granted day:2009-04-09
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