Invention Grant
US07936248B2 Ti(N) thin-film resistor deposited on ALN substrate and attenuator using same
有权
沉积在ALN衬底上的Ti（N）薄膜电阻和使用它的衰减器
- Patent Title: Ti(N) thin-film resistor deposited on ALN substrate and attenuator using same
- Patent Title (中): 沉积在ALN衬底上的Ti（N）薄膜电阻和使用它的衰减器
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Application No.: US12149449Application Date: 2008-05-01
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Publication No.: US07936248B2Publication Date: 2011-05-03
- Inventor: Soon-Gil Yoon , Duy Cuong Nguyen , Dong-Jin Kim , Je-Cheon Ryu
- Applicant: Soon-Gil Yoon , Duy Cuong Nguyen , Dong-Jin Kim , Je-Cheon Ryu
- Applicant Address: KR Daejeon
- Assignee: The Industry & Academic Cooperation in Chungnam National University (IAC)
- Current Assignee: The Industry & Academic Cooperation in Chungnam National University (IAC)
- Current Assignee Address: KR Daejeon
- Agency: Edwards Angell Palmer & Dodge LLP
- Agent Kongsik Kim
- Priority: KR10-2007-0064063 20070628
- Main IPC: H01C1/012
- IPC: H01C1/012
Abstract:
The present invention relates to a thin-film resistor for an attenuator that is utilized in the fourth generation mobile communication, and more specifically, to a thin-film resistor having a Ti(N) thin film formed on an aluminum nitride (ALN) substrate. The thin-film resistor of the invention has superior electrical characteristics, such as sheet resistance, and superior characteristics in change of attenuation and voltage standing wave ratio (VSWR) with respect to changes of frequency and L/W, and thus the thin-film resistor can be utilized in a high frequency domain of up to 6 GHz.
Public/Granted literature
- US20090002123A1 Ti(N) thin-film resistor deposited on ALN substrate and attenuator using same Public/Granted day:2009-01-01
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