Invention Grant
- Patent Title: High-impedance substrate
- Patent Title (中): 高阻抗衬底
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Application No.: US12175854Application Date: 2008-07-18
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Publication No.: US07936310B2Publication Date: 2011-05-03
- Inventor: Fumihiko Aiga , Seiichi Suenaga , Kouichi Harada , Tomohiro Suetsuna , Maki Yonetsu , Naoyuki Nakagawa , Tomoko Eguchi
- Applicant: Fumihiko Aiga , Seiichi Suenaga , Kouichi Harada , Tomohiro Suetsuna , Maki Yonetsu , Naoyuki Nakagawa , Tomoko Eguchi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
- Priority: JP2007-188399 20070719
- Main IPC: H01Q1/38
- IPC: H01Q1/38 ; H01Q15/02

Abstract:
A high-impedance substrate is provided, which includes a metallic plate employed as a ground plane, a resonance circuit layer spaced away from the metallic plate by a distance “t”, the resonance circuit layer being provided with at least two resonance circuits having the same height and disposed side by side with a distance “g”, a connecting component connecting the resonance circuit with the metallic plate, and a magnetic material layer interposed between the metallic plate and the resonance circuit layer. The distance “t” between the metallic plate and the resonance circuit layer is confined within the range of 0.1 to 10 mm, the distance “g” between neighboring resonance circuits is confined within the range of 0.01 to 5 mm, the distance “h” between the magnetic material layer and the resonance circuit layer is confined within the range represented by the following inequality 1: g/2≦h≦t/2 inequality 1.
Public/Granted literature
- US20090021444A1 HIGH-IMPEDANCE SUBSTRATE Public/Granted day:2009-01-22
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