Invention Grant
US07936539B2 Bottom spin valve GMR sensor incorporating plural oxygen surfactant layers
有权
底部自旋阀GMR传感器结合了多个氧表面活性剂层
- Patent Title: Bottom spin valve GMR sensor incorporating plural oxygen surfactant layers
- Patent Title (中): 底部自旋阀GMR传感器结合了多个氧表面活性剂层
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Application No.: US11717973Application Date: 2007-03-14
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Publication No.: US07936539B2Publication Date: 2011-05-03
- Inventor: Cheng T. Horng , Ru-Ying Tong
- Applicant: Cheng T. Horng , Ru-Ying Tong
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/39
- IPC: G11B5/39

Abstract:
A bottom spin-valve GMR sensor has been fabricated that has ultra-thin layers of high density and smoothness. In addition, these layers are inherently furnished with sub-monolayer thick oxygen surfactant layers. The sensor is fabricated using a method in which the layers are sputtered in a mixture of Ar and O2. A particularly novel feature of the method is the use of a sputtering chamber with an ultra-low base pressure and correspondingly ultra-low pressure mixtures of Ar and O2 sputtering gas (
Public/Granted literature
- US20070159732A1 Spin valve head for ultra-high recording density application Public/Granted day:2007-07-12
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