Invention Grant
- Patent Title: Circuit device and method of manufacturing the same
- Patent Title (中): 电路装置及其制造方法
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Application No.: US11307283Application Date: 2006-01-30
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Publication No.: US07936569B2Publication Date: 2011-05-03
- Inventor: Sadamichi Takakusaki , Noriaki Sakamoto , Motoichi Nezu , Yusuke Igarashi
- Applicant: Sadamichi Takakusaki , Noriaki Sakamoto , Motoichi Nezu , Yusuke Igarashi
- Applicant Address: JP Moriguchi
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Moriguchi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2005-023328 20050131; JP2005-346916 20051130
- Main IPC: H05K7/00
- IPC: H05K7/00

Abstract:
In a hybrid integrated circuit device that is a circuit device of the present invention, a conductive pattern including pads is formed on a surface of a substrate. A first pad is formed to be relatively large since a heat sink is mounted thereon. A second pad is a small pad to which a chip component or a small signal transistor is fixed. In the present invention, a plated film made of nickel is formed on a surface of the first pad. Therefore, the first pad and a solder never come into contact with each other. Thus, a Cu/Sn alloy layer having poor soldering properties is not generated but a Ni/Sn alloy layer having excellent soldering properties is generated. Consequently, occurrence of sink in the melted solder is suppressed.
Public/Granted literature
- US20070205017A1 CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2007-09-06
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