Circuits, apparatuses, and methods of interposing a selectable delay in reading a magnetic random access memory (MRAM) device are disclosed. In a particular embodiment, a circuit includes a sense amplifier, having a first input, a second input, and an enable input. A first amplifier coupled to an output of a magnetic resistance-based memory cell and a second amplifier coupled to a reference output of the cell also are provided. The circuit further includes a digitally-controllable amplifier coupled to a tracking circuit cell. The tracking circuit cell includes at least one element that is similar to the cell of the magnetic resistance-based memory. The first input of the sense amplifier is coupled to the first amplifier, the second input of the sense amplifier is coupled to the second amplifier, and the enable input is coupled to the third digitally-controllable amplifier via a logic circuit. The sense amplifier may generate an output value based on the amplified values received from the output of the magnetic resistance-based memory cell and the reference cell once the sense amplifier receives an enable signal from the digitally-controllable amplifier via the logic circuit.