Invention Grant
- Patent Title: Non-volatile memory cell with precessional switching
- Patent Title (中): 具有进动切换的非易失性存储单元
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Application No.: US12364589Application Date: 2009-02-03
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Publication No.: US07936592B2Publication Date: 2011-05-03
- Inventor: Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar Dimitrov , Wei Tan , Brian Seungwhan Lee
- Applicant: Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar Dimitrov , Wei Tan , Brian Seungwhan Lee
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Fellers, Snider etc.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.
Public/Granted literature
- US20100195380A1 Non-Volatile Memory Cell with Precessional Switching Public/Granted day:2010-08-05
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