Invention Grant
- Patent Title: Magnetic tunnel junction cell including multiple magnetic domains
- Patent Title (中): 磁隧道结电池包括多个磁畴
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Application No.: US12024157Application Date: 2008-02-01
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Publication No.: US07936596B2Publication Date: 2011-05-03
- Inventor: Xia Li
- Applicant: Xia Li
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Jonathan T. Velasco
- Main IPC: G11C11/15
- IPC: G11C11/15
Abstract:
In a particular embodiment, a magnetic tunnel junction (MTJ) structure is disclosed that includes an MTJ cell having multiple sidewalls that extend substantially normal to a surface of a substrate. Each of the multiple sidewalls includes a free layer to carry a unique magnetic domain. Each of the unique magnetic domains is adapted to store a digital value.
Public/Granted literature
- US20090194832A1 Magnetic Tunnel Junction Cell Including Multiple Magnetic Domains Public/Granted day:2009-08-06
Information query
