Invention Grant
- Patent Title: Multilevel magnetic storage device
- Patent Title (中): 多级磁存储装置
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Application No.: US12054775Application Date: 2008-03-25
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Publication No.: US07936597B2Publication Date: 2011-05-03
- Inventor: Thomas W. Clinton , Michael A. Seigler , Mark W. Convington , Werner Scholz
- Applicant: Thomas W. Clinton , Michael A. Seigler , Mark W. Convington , Werner Scholz
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Fellers, Snider, et al.
- Main IPC: G11C11/15
- IPC: G11C11/15
Abstract:
The present invention includes a memory configured to store data having a pinned layer and a plurality of stacked memory locations. Each memory location includes a nonmagnetic layer and a switchable magnetic layer. The plurality of stacked memory locations are capable of storing a plurality of data bits.
Public/Granted literature
- US20090244957A1 MULTILEVEL MAGNETIC STORAGE DEVICE Public/Granted day:2009-10-01
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