Invention Grant
- Patent Title: Magnetic stack having assist layer
- Patent Title (中): 具有辅助层的磁性堆叠
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Application No.: US12431162Application Date: 2009-04-28
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Publication No.: US07936598B2Publication Date: 2011-05-03
- Inventor: Yuankai Zheng , Zheng Gao , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Haiwen Xi
- Applicant: Yuankai Zheng , Zheng Gao , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Haiwen Xi
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology
- Current Assignee: Seagate Technology
- Current Assignee Address: US CA Scotts Valley
- Agency: Campbell Nelson Whipps LLC
- Main IPC: G11C11/15
- IPC: G11C11/15
Abstract:
A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy.
Public/Granted literature
- US20100271870A1 MAGNETIC STACK HAVING ASSIST LAYER Public/Granted day:2010-10-28
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