Invention Grant
US07936601B2 Non-volatile memory devices and systems including multi-level cells using modified read voltages and methods of operating the same
有权
非易失性存储器件和系统，包括使用修改的读取电压的多电平单元及其操作方法
- Patent Title: Non-volatile memory devices and systems including multi-level cells using modified read voltages and methods of operating the same
- Patent Title (中): 非易失性存储器件和系统，包括使用修改的读取电压的多电平单元及其操作方法
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Application No.: US12145279Application Date: 2008-06-24
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Publication No.: US07936601B2Publication Date: 2011-05-03
- Inventor: Dong Gu Kang , Seungjae Lee , Donghyuk Chae
- Applicant: Dong Gu Kang , Seungjae Lee , Donghyuk Chae
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2007-0064543 20070628
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Methods of operating a multi-level non-volatile memory device can include accessing data, stored in the device, which is associated with read voltages and modifying the read voltages applied to a plurality of multi-level non-volatile memory cells to discriminate between states stored by the cells in response to a read operation to the multi-level non-volatile memory device. Related devices and systems are also disclosed.
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