Invention Grant
- Patent Title: High speed operation method for twin MONOS metal bit array
- Patent Title (中): 双MONOS金属钻头阵列的高速运行方式
-
Application No.: US11215418Application Date: 2005-08-30
-
Publication No.: US07936604B2Publication Date: 2011-05-03
- Inventor: Tomoko Ogura , Nori Ogura , Seiki Ogura , Tomoya Saito , Yoshitaka Baba
- Applicant: Tomoko Ogura , Nori Ogura , Seiki Ogura , Tomoya Saito , Yoshitaka Baba
- Applicant Address: US OR Hillsboro
- Assignee: Halo LSI Inc.
- Current Assignee: Halo LSI Inc.
- Current Assignee Address: US OR Hillsboro
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman; Rosemary L. S. Pike
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
The present invention provides a novel operational method of twin MONOS metal bit or diffusion bit structure for high-speed application. In a first embodiment of the present invention, the alternative control gates are set at the same voltage. In a second embodiment of the present invention, all the control gates are set at the operational voltage from the beginning. In both embodiments, the bit line and word gate are used to address the selected memory cell.
Public/Granted literature
- US20070047307A1 High speed operation method for twin MONOS metal bit array Public/Granted day:2007-03-01
Information query
