Invention Grant
- Patent Title: Receiver of semiconductor memory apparatus
- Patent Title (中): 半导体存储器的接收器
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Application No.: US12483413Application Date: 2009-06-12
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Publication No.: US07936620B2Publication Date: 2011-05-03
- Inventor: Tae-Jin Hwang , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
- Applicant: Tae-Jin Hwang , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Venable LLP
- Agent Jeffri A. Kaminski
- Priority: KR10-2008-0077694 20080808
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A receiver of a semiconductor memory apparatus includes a first input transistor configured to be turned ON when an input signal is equal to or more than a predetermined level; a second input transistor configured to be turned ON when the input signal is equal to or less than the predetermined level; a first output node voltage control unit configured to increase a voltage level of an output node when the first input transistor is turned ON; a second output node voltage control unit configured to decrease the voltage level of the output node when the second input transistor is turned ON; a third input transistor configured to increase the voltage level of the output node when an inversion signal of the input signal is equal to or less than the predetermined voltage level; and a fourth input transistor configured to decrease the voltage level of the output node when the inversion signal of the input signal is equal to or more than the predetermined voltage level.
Public/Granted literature
- US20100034033A1 RECEIVER OF SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2010-02-11
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