Invention Grant
- Patent Title: Universal structure for memory cell characterization
- Patent Title (中): 记忆细胞表征的通用结构
-
Application No.: US11945405Application Date: 2007-11-27
-
Publication No.: US07936623B2Publication Date: 2011-05-03
- Inventor: Xiaowei Deng , Theodore Warren Houston
- Applicant: Xiaowei Deng , Theodore Warren Houston
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C11/41 ; G11C11/413

Abstract:
An integrated circuit includes a structure, where the structure includes a memory base cell, a first port set, a second port set, and a set of other ports, where the memory base cell includes a first storage node set, a second storage node set, and a set of other nodes, where the set of other nodes includes a first data node for accessing the first storage node set, a first access control node for controlling the access of the first storage node set, a first supply node for supplying the first storage node set, and a second supply node for supplying the second storage node set, where the first and second supply nodes are of the same sinking or sourcing type and are not connected together, where each node in the first storage node set is connected to a port in the first port set, where each node in the second storage node set is connected to a port in the second port set, where each of the other nodes is connected to one of the other ports, and where each of the other ports is connected to one and only one of the other nodes.
Public/Granted literature
- US20080144421A1 UNIVERSAL STRUCTURE FOR MEMORY CELL CHARACTERIZATION Public/Granted day:2008-06-19
Information query