Invention Grant
US07936625B2 Pipeline sensing using voltage storage elements to read non-volatile memory cells
有权
管道感应使用电压存储元件来读取非易失性存储单元
- Patent Title: Pipeline sensing using voltage storage elements to read non-volatile memory cells
- Patent Title (中): 管道感应使用电压存储元件来读取非易失性存储单元
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Application No.: US12409671Application Date: 2009-03-24
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Publication No.: US07936625B2Publication Date: 2011-05-03
- Inventor: Yiran Chen , Hai Li , Harry Hongyue Liu , KangYong Kim , Henry F. Huang
- Applicant: Yiran Chen , Hai Li , Harry Hongyue Liu , KangYong Kim , Henry F. Huang
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Fellers, Snider, et al.
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Various embodiments are generally directed to a method and apparatus for carrying out a pipeline sensing operation. In some embodiments, a read voltage from a first memory cell is stored in a voltage storage element (VSE) and compared to a reference voltage to identify a corresponding memory state of the first memory cell while a second read voltage from a second memory cell is stored in a second VSE. In other embodiments, bias currents are simultaneously applied to a first set of memory cells from the array while read voltages generated thereby are stored in a corresponding first set of VSEs. The read voltages are sequentially compared with at least one reference value to serially output a logical sequence corresponding to the memory states of the first set of memory cells while read voltages are stored for a second set of memory cells in a second set of VSEs.
Public/Granted literature
- US20100246250A1 Pipeline Sensing Using Voltage Storage Elements to Read Non-Volatile Memory Cells Public/Granted day:2010-09-30
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