Invention Grant
- Patent Title: Sense amplifier with a compensating circuit
- Patent Title (中): 带补偿电路的感应放大器
-
Application No.: US12356087Application Date: 2009-01-20
-
Publication No.: US07936626B2Publication Date: 2011-05-03
- Inventor: Yin-Chang Chen
- Applicant: Yin-Chang Chen
- Applicant Address: TW Hsinchu Science Park, Hsin-Chu
- Assignee: eMemory Technology Inc.
- Current Assignee: eMemory Technology Inc.
- Current Assignee Address: TW Hsinchu Science Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G11C7/02
- IPC: G11C7/02
Abstract:
A sense amplifier for a memory includes a transistor, an operational amplifier, and a compensating circuit. The negative input end of the operational amplifier is coupled to the compensating circuit. The positive input end of the operational amplifier is coupled to the drain of the transistor. The output end of the operational amplifier is coupled to the gate of the transistor. The compensating circuit is coupled between the negative input end and the output end of the operational amplifier. The compensating circuit generates a compensating voltage to the negative input end of the operational amplifier according to the voltage of the gate of the transistor.
Public/Granted literature
- US20100182861A1 SENSE AMPLIFIER WITH A COMPENSATING CIRCUIT Public/Granted day:2010-07-22
Information query
