Invention Grant
- Patent Title: Table-based reference voltage characterization scheme
- Patent Title (中): 基于表的参考电压表征方案
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Application No.: US12352722Application Date: 2009-01-13
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Publication No.: US07936629B2Publication Date: 2011-05-03
- Inventor: Henry F. Huang , Andrew J. Carter , Maroun Khoury , Yong Lu , Yiran Chen
- Applicant: Henry F. Huang , Andrew J. Carter , Maroun Khoury , Yong Lu , Yiran Chen
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Fellers, Snider, et al.
- Main IPC: G11C7/02
- IPC: G11C7/02
Abstract:
Method and apparatus for reading data from a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, at least a first and second memory cell are read for a plurality of resistance values that are used to select and store a voltage reference for each memory cell.
Public/Granted literature
- US20100177552A1 TABLE-BASED REFERENCE VOLTAGE CHARACTERIZATION SCHEME Public/Granted day:2010-07-15
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