Invention Grant
- Patent Title: Non-volatile memory element and method of operation therefor
- Patent Title (中): 非易失性存储元件及其操作方法
-
Application No.: US12318823Application Date: 2009-01-09
-
Publication No.: US07936631B2Publication Date: 2011-05-03
- Inventor: Vadym Zayets , Koji Ando
- Applicant: Vadym Zayets , Koji Ando
- Applicant Address: JP Tokyo
- Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2008-001970 20080109
- Main IPC: G11C13/04
- IPC: G11C13/04
Abstract:
A very small magnetic tunnel junction is formed on a semiconductor p-i-n diode. Spin-polarized current which is generated by circular polarized light or elliptically-polarized light, is injected into a free layer of the magnetic tunnel junction so that magnetization direction (two opposite directions) in the free layer is changed based on the information, whereby information is stored in the memory element.
Public/Granted literature
- US20090175110A1 Non-volatile memory element and method of operation therefor Public/Granted day:2009-07-09
Information query
