Invention Grant
- Patent Title: Semiconductor device including an internal circuit receiving two different power supply sources
- Patent Title (中): 包括接收两个不同电源的内部电路的半导体器件
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Application No.: US12493976Application Date: 2009-06-29
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Publication No.: US07936632B2Publication Date: 2011-05-03
- Inventor: Khil-Ohk Kang
- Applicant: Khil-Ohk Kang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0092238 20080919; KR10-2009-0053799 20090617
- Main IPC: G11C5/14
- IPC: G11C5/14
Abstract:
A semiconductor device includes an internal circuit configured to receive a first power supply voltage applied via a first power input terminal through a first power supply path and receive an internal power supply voltage to perform a predetermined circuit operation and an internal power supply voltage generator configured to receive a second power supply voltage for a power circuit applied via a second power input terminal through a second power supply path and generate the internal power supply voltage, wherein the second power supply path is separated from the first power supply path.
Public/Granted literature
- US20100074043A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-03-25
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