Invention Grant
- Patent Title: Circuit and method of generating voltage of semiconductor memory apparatus
- Patent Title (中): 电路和半导体存储装置的电压产生方法
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Application No.: US12575663Application Date: 2009-10-08
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Publication No.: US07936633B2Publication Date: 2011-05-03
- Inventor: Khil-Ohk Kang
- Applicant: Khil-Ohk Kang
- Applicant Address: KR Gyeonggi-Do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Venable LLP
- Agent Jeffri A. Kaminski
- Priority: KR10-2006-0112257 20061114
- Main IPC: G11C5/14
- IPC: G11C5/14
Abstract:
A circuit for generating a voltage of a semiconductor memory apparatus includes a control unit that outputs a driving control signal in response to an enable signal and a burn-in signal, a first voltage generating unit that generates and outputs a first voltage in response to the enable signal, and a voltage maintaining unit that maintains the first voltage in response to the driving control signal.
Public/Granted literature
- US20100020623A1 CIRCUIT AND METHOD OF GENERATING VOLTAGE OF SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2010-01-28
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