Invention Grant
- Patent Title: System and method for processing signals in high speed DRAM
- Patent Title (中): 用于处理高速DRAM信号的系统和方法
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Application No.: US11862933Application Date: 2007-09-27
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Publication No.: US07936639B2Publication Date: 2011-05-03
- Inventor: Ben Ba , Victor Wong
- Applicant: Ben Ba , Victor Wong
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agent Fletcher Yoder
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
A method is disclosed for operating a memory device, including providing a timing signal comprising a plurality of clock cycles, providing an activate signal, and providing a bank address signal. An activate command executes on every first duration of clock cycles, and the bank address signal is high for at least a portion of the first duration of clock cycles. In one embodiment, the first duration of the activate signal is at least four clock cycles, and the bank address signal is at least one clock cycle. A memory device having a row decoder and an active driver is also provided.
Public/Granted literature
- US20090086565A1 System and Method for Processing Signals in High Speed DRAM Public/Granted day:2009-04-02
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