Invention Grant
- Patent Title: External cavity semiconductor laser
- Patent Title (中): 外腔半导体激光器
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Application No.: US11887063Application Date: 2006-03-24
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Publication No.: US07936803B2Publication Date: 2011-05-03
- Inventor: Miki Yatsuki , Tokutaka Hara , Masahito Mure
- Applicant: Miki Yatsuki , Tokutaka Hara , Masahito Mure
- Applicant Address: JP Chiyoda-ku, Tokyo
- Assignee: Sumitomo Osaka Cement Co., Ltd.
- Current Assignee: Sumitomo Osaka Cement Co., Ltd.
- Current Assignee Address: JP Chiyoda-ku, Tokyo
- Agency: Merchant & Gould P.C.
- Priority: JP2005-089635 20050325; JP2005-089825 20050325; JP2005-301321 20051017
- International Application: PCT/JP2006/305947 WO 20060324
- International Announcement: WO2006/104034 WO 20061005
- Main IPC: H01S3/083
- IPC: H01S3/083

Abstract:
An external cavity semiconductor laser including a first and second input-output section disposed on a common end surface via a center axis, and a semiconductor laser device emitting a first and second laser light from the first and second input-output sections in two directions. The laser device includes a first reflecting unit for reflecting the first laser light emitted from the first input-output section and returning the reflected first laser light to the first input-output section, a second reflecting unit for reflecting the second laser light emitted from the second input-output section and returning the reflected second laser light to the second input-output section, a third reflecting unit provided to a second end surface disposed opposite a first end surface having first and second input-output sections for reflecting laser light returned to one of the input-output sections so as to be emitted from the other one of the input-output sections.
Public/Granted literature
- US20090059990A1 External Cavity semiconductor laser Public/Granted day:2009-03-05
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