Invention Grant
- Patent Title: Charging method for semiconductor device manufacturing apparatus, storage medium storing program for implementing the charging method, and semiconductor device manufacturing apparatus implementing the charging method
- Patent Title (中): 用于半导体器件制造装置的充电方法，用于实施充电方法的存储介质存储程序以及实现充电方法的半导体器件制造装置
-
Application No.: US11843400Application Date: 2007-08-22
-
Publication No.: US07937178B2Publication Date: 2011-05-03
- Inventor: Tsuyoshi Moriya
- Applicant: Tsuyoshi Moriya
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-230487 20060828
- Main IPC: G06F19/00
- IPC: G06F19/00 ; G06F11/00 ; G06F17/00 ; G01N37/00
Abstract:
A charging method for a semiconductor device manufacturing apparatus, which can appropriately and promptly distribute profits between a customer and a manufacturer according to the yield of semiconductor devices. An indicator related to the yield of the semiconductor devices is measured, and a fee is charged for the usage of the semiconductor device manufacturing apparatus according to the measured indicator.
Public/Granted literature
Information query
