Invention Grant
US07937179B2 Dynamic inline yield analysis and prediction of a defect limited yield using inline inspection defects
有权
使用在线检测缺陷的动态在线产量分析和预测缺陷限制产量
- Patent Title: Dynamic inline yield analysis and prediction of a defect limited yield using inline inspection defects
- Patent Title (中): 使用在线检测缺陷的动态在线产量分析和预测缺陷限制产量
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Application No.: US12154459Application Date: 2008-05-22
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Publication No.: US07937179B2Publication Date: 2011-05-03
- Inventor: Rinat Shimshi , Youval Nehmadi , Vicky Svidenko , Alexander T. Schwarm , Sundar Jawaharlal
- Applicant: Rinat Shimshi , Youval Nehmadi , Vicky Svidenko , Alexander T. Schwarm , Sundar Jawaharlal
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G06F19/00
- IPC: G06F19/00 ; G06F17/50 ; H01L21/66 ; G06K9/00
Abstract:
In one embodiment, a method for predicting yield includes calculating a criticality factor (CF) for each of a plurality of defects detected in an inspection process step of a wafer, and determining a yield-loss contribution of the inspection process step to the final yield based on CFs of the plurality of defects and the yield model built for a relevant design. The yield-loss contribution of the inspection process step is then used to predict the final yield for the wafer.
Public/Granted literature
- US20080294281A1 Dynamic inline yield analysis and prediction Public/Granted day:2008-11-27
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