An invention is provided for read disturbance management in a non-volatile memory. The invention includes storing a read count data for a memory location in non-volatile memory. The read count data indicating an amount of read operations accessing the memory location since data was last written to the memory location. Then, when data is read from the memory location while the value of the read count data is less than a predetermined threshold value, the value of the read count data is incremented. However, when the value of the read count data equals the predetermined threshold value, the data is moved to a new memory location, thereby avoiding read disturbance effects.