Invention Grant
- Patent Title: Configuration of a multi-level flash memory device
- Patent Title (中): 配置多级闪存设备
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Application No.: US11460777Application Date: 2006-07-28
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Publication No.: US07937576B2Publication Date: 2011-05-03
- Inventor: Angelo Bovino , Roberto Ravasio , Rino Micheloni
- Applicant: Angelo Bovino , Roberto Ravasio , Rino Micheloni
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwabe Williamson & Wyatt
- Priority: EP05425559 20050728
- Main IPC: G06F9/24
- IPC: G06F9/24

Abstract:
A multi-level flash memory device allows for a faster and more effective configuration of the operating parameters of the memory device for performing the different functioning algorithms of the memory The identification of an optimal configuration of the operating parameters of the memory device during testing is simplified by allowing for a one-time processing of configuration bits into algorithm-friendly data that are stored in an embedded ancillary random access memory at every power-on of the memory device This is done by executing a specific power-on algorithm code stored in the ancillary read only memory of the embedded microprocessor.
Public/Granted literature
- US20070038852A1 CONFIGURATION OF A MULTILEVEL FLASH MEMORY DEVICE Public/Granted day:2007-02-15
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