Invention Grant
- Patent Title: Semiconductor memory apparatus having noise generating block and method of testing the same
- Patent Title (中): 具有噪声发生块的半导体存储装置及其测试方法
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Application No.: US11641854Application Date: 2006-12-20
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Publication No.: US07937629B2Publication Date: 2011-05-03
- Inventor: Jun-Hyun Chun
- Applicant: Jun-Hyun Chun
- Applicant Address: KR Ichon-shi
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Ichon-shi
- Agency: Venable LLP
- Agent Jeffri A. Kaminski
- Priority: KR10-2006-0031617 20060406
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C7/00 ; G01R35/00 ; G01R31/26

Abstract:
Disclosed are a semiconductor memory apparatus and a method of testing the same. The semiconductor memory apparatus includes memory banks, each of which includes a plurality of memory cells, a peripheral circuit unit that includes a plurality of circuit groups around the memory banks, and a noise generating block that is disposed in the peripheral circuit unit and selectively applies a noise to the memory banks in a test mode.
Public/Granted literature
- US20070258299A1 Semiconductor memory apparatus having noise generating block and method of testing the same Public/Granted day:2007-11-08
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