Invention Grant
US07937675B2 Structure including transistor having gate and body in direct self-aligned contact
有权
结构包括具有直接自对准接触的门和体的晶体管
- Patent Title: Structure including transistor having gate and body in direct self-aligned contact
- Patent Title (中): 结构包括具有直接自对准接触的门和体的晶体管
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Application No.: US11935612Application Date: 2007-11-06
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Publication No.: US07937675B2Publication Date: 2011-05-03
- Inventor: Brent A. Anderson , Andres Bryant , William F. Clark, Jr. , Edward J. Nowak
- Applicant: Brent A. Anderson , Andres Bryant , William F. Clark, Jr. , Edward J. Nowak
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Richard Kotulak
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L29/76
Abstract:
A design structure including a transistor having a directly contacting gate and body is disclosed. In one embodiment, the transistor includes a gate; a body; and a dielectric layer extending over the body to insulate the gate from the body along an entire surface of the body except along a portion of at least a sidewall of the body, wherein the gate is in direct contact with the body at the portion.
Public/Granted literature
- US20090119626A1 DESIGN STRUCTURE INCLUDING TRANSISTOR HAVING GATE AND BODY IN DIRECT SELF-ALIGNED CONTACT Public/Granted day:2009-05-07
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