Invention Grant
- Patent Title: Multilayer substrate manufacturing method
- Patent Title (中): 多层基板制造方法
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Application No.: US12385314Application Date: 2009-04-03
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Publication No.: US07937827B2Publication Date: 2011-05-10
- Inventor: Don C. Choi , Dong-Hwan Lee , Hee-Soo Yoon
- Applicant: Don C. Choi , Dong-Hwan Lee , Hee-Soo Yoon
- Applicant Address: KR Suwon
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon
- Priority: KR10-2005-0038680 20050510
- Main IPC: H01R12/16
- IPC: H01R12/16 ; H05K3/36

Abstract:
A method for producing a multilayer substrate includes stacking a first substrate, the first substrate having a circuit pattern; stacking a connector, the connector coupling onto said first substrate, the connector having a ring structure, the ring structure having a plurality of holes separated a predetermined distance from one another; and stacking a second substrate, the second substrate coupling onto said first substrate by inserting said connector, the second substrate having a circuit pattern, the circuit pattern being electrically connected to a circuit pattern formed on said first substrate, the circuit pattern being electrically connected using the plurality of holes formed on said connector. The method of producing a multilayer substrate can shield the EMI generated by a high-speed switching element.
Public/Granted literature
- US20090197369A1 Multilayer substrate manufacturing method Public/Granted day:2009-08-06
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