Invention Grant
- Patent Title: Multiple layer strain gauge
- Patent Title (中): 多层应变仪
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Application No.: US12408442Application Date: 2009-03-20
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Publication No.: US07938016B2Publication Date: 2011-05-10
- Inventor: Thomas H. Koschmieder
- Applicant: Thomas H. Koschmieder
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Charles Bergere; Kim Marie Vo
- Main IPC: G01N19/08
- IPC: G01N19/08 ; G01B7/16

Abstract:
An apparatus and method uses a die having at least one perimeter side with multiple pads. A structure is positioned between the at least one perimeter side and the multiple pads having multiple layers within the die. The structure functions as both a strain gauge and a crack stop. The structure arrests cracks from propagating from the at least one perimeter side to an interior of the die and provides an electrical resistance value as a function of an amount of strain existing where the structure is positioned. In another form the structure is implemented on a substrate such as a printed circuit board rather than in a semiconductor die.
Public/Granted literature
- US20100236334A1 MULTIPLE LAYER STRAIN GAUGE Public/Granted day:2010-09-23
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