Invention Grant
US07938980B2 Chemical etching composition for the preparation of 3-D nano-structures
有权
用于制备3-D纳米结构的化学蚀刻组合物
- Patent Title: Chemical etching composition for the preparation of 3-D nano-structures
- Patent Title (中): 用于制备3-D纳米结构的化学蚀刻组合物
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Application No.: US11978225Application Date: 2007-10-26
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Publication No.: US07938980B2Publication Date: 2011-05-10
- Inventor: Sean Wong , Georg von Freymann , Martin Wegener , Geoffrey Alan Ozin
- Applicant: Sean Wong , Georg von Freymann , Martin Wegener , Geoffrey Alan Ozin
- Applicant Address: DE Karlsruhe
- Assignee: Forschungszentrum Karlsruhe GmbH
- Current Assignee: Forschungszentrum Karlsruhe GmbH
- Current Assignee Address: DE Karlsruhe
- Agency: Lucas & Mercanti, LLP
- Agent Klaus P. Stoffel
- Priority: EP06122987 20061026
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; C25F3/00
Abstract:
A method of using a chemical compound as an etchant for the removal of unmodified areas of a chalcogenide-based glass, while leaving the imagewise modified areas un-removed, wherein the compound contains a secondary amine, R1 R2 NH, with R1 and/or R2 having a sterically bulky group with more than 5 atoms.
Public/Granted literature
- US20080128391A1 Chemical etching composition for the preparation of 3-D nano-structures Public/Granted day:2008-06-05
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