Invention Grant
- Patent Title: Extreme ultra violet lithography mask and method for fabricating the same
- Patent Title (中): 极紫外光刻掩模及其制造方法
-
Application No.: US12165395Application Date: 2008-06-30
-
Publication No.: US07939228B2Publication Date: 2011-05-10
- Inventor: Yong Dae Kim
- Applicant: Yong Dae Kim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: KR10-2008-0037404 20080422
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
A method for fabricating an extreme ultra violet lithography mask includes forming a reflective layer that reflects an extreme ultra violet light on a substrate; forming a capping layer that transmits the extreme ultra violet light on the reflective layer; and forming selectively pores in some region of the capping layer to form a light absorption region that absorbs the extreme ultra violet light.
Public/Granted literature
- US20090263730A1 EXTREME ULTRA VIOLET LITHOGRAPHY MASK AND METHOD FOR FABRICATING THE SAME Public/Granted day:2009-10-22
Information query
