Invention Grant
- Patent Title: Semiconductor device manufacturing method
- Patent Title (中): 半导体器件制造方法
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Application No.: US12548838Application Date: 2009-08-27
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Publication No.: US07939347B2Publication Date: 2011-05-10
- Inventor: Wensheng Wang
- Applicant: Wensheng Wang
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2008-219353 20080828
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/20
Abstract:
A semiconductor device manufacturing method includes forming a first film made of a first metal to an upper portion of a substrate, forming a second film made of an amorphous metal oxide or an microcrystalline metal oxide on the first film, subjecting the second film to a heat treatment, subjecting the second film after the heat treatment to a reduction treatment, forming a third film made of a ferroelectric material on the second film, and forming a fourth film made of a second metal on the third film.
Public/Granted literature
- US20100055805A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2010-03-04
Information query
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