Invention Grant
- Patent Title: Nitride-based semiconductor light emitting device and manufacturing method thereof
- Patent Title (中): 氮化物系半导体发光元件及其制造方法
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Application No.: US11494845Application Date: 2006-07-27
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Publication No.: US07939349B2Publication Date: 2011-05-10
- Inventor: Norikatsu Koide , Toshio Hata , Mayuko Fudeta , Daigaku Kimura
- Applicant: Norikatsu Koide , Toshio Hata , Mayuko Fudeta , Daigaku Kimura
- Applicant Address: JP Osaka-shi
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka-shi
- Agency: Morrison & Foerster LLP
- Priority: JP2002-120576 20020423
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.
Public/Granted literature
- US20060267033A1 Nitride-based semiconductor light emitting device and manufacturing method thereof Public/Granted day:2006-11-30
Information query
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