Invention Grant
US07939355B2 Single-mask fabrication process for linear and angular piezoresistive accelerometers
有权
用于线性和角度压阻加速度计的单掩模制造工艺
- Patent Title: Single-mask fabrication process for linear and angular piezoresistive accelerometers
- Patent Title (中): 用于线性和角度压阻加速度计的单掩模制造工艺
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Application No.: US11541073Application Date: 2006-09-29
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Publication No.: US07939355B2Publication Date: 2011-05-10
- Inventor: Erik J. Eklund , Andrei M. Shkel
- Applicant: Erik J. Eklund , Andrei M. Shkel
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agent Daniel L. Dawes; Marcus C. Dawes
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/14

Abstract:
An accelerometer and a method of fabricating an integrated accelerometer comprises the steps of providing an SOI wafer with a selected resistivity to eliminate any need for additional doping of the SOI wafer, providing a single mask on the SOI wafer, and simultaneously defining all components of the accelerometer in the SOI wafer without using any pn-junctions to define any piezoresistive components and to provide the same resistivity of all components. The step of simultaneously defining all components of the accelerometer in the SOI wafer comprises defining all components of a linear or angular accelerometer.
Public/Granted literature
- US20070084041A1 Single-mask fabrication process for linear and angular piezoresistive accelerometers Public/Granted day:2007-04-19
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