Invention Grant
- Patent Title: Phase change memory device, manufacturing method thereof and operating method thereof
- Patent Title (中): 相变存储器件及其制造方法及其操作方法
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Application No.: US12134388Application Date: 2008-06-06
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Publication No.: US07939365B2Publication Date: 2011-05-10
- Inventor: Hee Bok Kang , Suk Kyoung Hong
- Applicant: Hee Bok Kang , Suk Kyoung Hong
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2007-0090559 20070906
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A phase change memory (PCM) device, a manufacturing technique of making the PCM device, and a way of operating the PCM device is presented. The PCM device is structured to have a silicon on insulator type substrate that provides an advantage of thermally insulating the active area of the PCM device without the need for an additional insulation layer. The PCM device has a phase change resistor PCR that has one terminal connected to a word line and the other terminal connected in common to the N-terminals of two PN diodes in which the P-terminals are connected in common to the bit line. As a result, a current flowing through the phase change resistor PCR is doubled which results in doubling the cell driving capacity.
Public/Granted literature
- US20090067228A1 PHASE CHANGE MEMORY DEVICE, MANUFACTURING METHOD THEREOF AND OPERATING METHOD THEREOF Public/Granted day:2009-03-12
Information query
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