Invention Grant
- Patent Title: Power semiconductor package
- Patent Title (中): 功率半导体封装
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Application No.: US12608853Application Date: 2009-10-29
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Publication No.: US07939370B1Publication Date: 2011-05-10
- Inventor: Jun Lu , François Hébert
- Applicant: Jun Lu , François Hébert
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agent Kenneth C. Brooks
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The present invention features a power semiconductor package and a method of forming the same that includes forming, in the body, a stress relief region disposed between a pair of mounting regions and attaching a semiconductor die in each of the mounting regions. The semiconductor die has first and second sets of electrical contacts with the first set being on a first surface of the semiconductor die and the second set being disposed upon a second surface of the semiconductor die opposite to the first surface. The first set is in electrical communication with the mounting region. Walls are formed on outer sides of the pair of mounting regions, defining a shaped body, with the shaped body and walls defining an electrically conductive path that extends from the first set and terminates on side of the package common with the second set.
Public/Granted literature
- US20110101511A1 POWER SEMICONDUCTOR PACKAGE Public/Granted day:2011-05-05
Information query
IPC分类: