Invention Grant
- Patent Title: Patterned thin SOI
- Patent Title (中): 图案薄SOI
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Application No.: US12280639Application Date: 2007-03-19
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Publication No.: US07939387B2Publication Date: 2011-05-10
- Inventor: Oleg Kononchuk
- Applicant: Oleg Kononchuk
- Applicant Address: FR Bernin
- Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- International Application: PCT/IB2007/051435 WO 20070319
- International Announcement: WO2008/114099 WO 20080925
- Main IPC: H01L21/84
- IPC: H01L21/84
Abstract:
A process for treating a structure to prepare it for electronics or optoelectronics applications. The structure includes a bulk substrate, an oxide layer, and a semiconductor layer, and the process includes providing a masking to define on the semiconductor layer a desired pattern, and applying a thermal treatment for removing a controlled thickness of oxide in the regions of the oxide layer corresponding to the desired pattern to assist in preparing the structure.
Public/Granted literature
- US20090032911A1 PATTERNED THIN SOI Public/Granted day:2009-02-05
Information query
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