Invention Grant
- Patent Title: Base oxide engineering for high-K gate stacks
- Patent Title (中): 高K栅极堆叠的基础氧化物工程
-
Application No.: US11450204Application Date: 2006-06-09
-
Publication No.: US07939396B2Publication Date: 2011-05-10
- Inventor: Peng-Fu Hsu , Jin Ying , Hun-Jan Tao
- Applicant: Peng-Fu Hsu , Jin Ying , Hun-Jan Tao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method of forming a semiconductor structure includes providing a semiconductor substrate, performing a hydrogen annealing to the semiconductor substrate, forming a base oxide layer after the step of hydrogen annealing, and forming a high-k dielectric layer on the base oxide layer.
Public/Granted literature
- US20070287199A1 Base oxide engineering for high-K gate stacks Public/Granted day:2007-12-13
Information query
IPC分类:
