Invention Grant
- Patent Title: Methods for making substrates and substrates formed therefrom
- Patent Title (中): 制造基材和由其形成的基材的方法
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Application No.: US12914194Application Date: 2010-10-28
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Publication No.: US07939428B2Publication Date: 2011-05-10
- Inventor: Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac
- Applicant: Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac, legal representative , Gisèle Rayssac, legal representative
- Applicant Address: FR Bernin
- Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0015279 20001127; FR0207132 20020611; FR0300780 20030124; FR0513045 20051221
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L21/30 ; H01L21/762
Abstract:
A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving substrate and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
Public/Granted literature
- US20110039368A1 METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM Public/Granted day:2011-02-17
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