Invention Grant
- Patent Title: Method of improving intrinsic gettering ability of wafer
- Patent Title (中): 提高晶片内在吸气能力的方法
-
Application No.: US12334829Application Date: 2008-12-15
-
Publication No.: US07939432B2Publication Date: 2011-05-10
- Inventor: Chun-Ling Chiang , Jung-Yu Hsieh , Ling-Wu Yang
- Applicant: Chun-Ling Chiang , Jung-Yu Hsieh , Ling-Wu Yang
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L21/335 ; H01L21/8232
Abstract:
A method of improving the intrinsic gettering ability of a wafer is described. A first annealing step is performed to the wafer at a first temperature in an atmosphere containing at least one of oxygen gas and nitrogen gas. A second annealing step is performed to the wafer, at a second temperature higher than the first temperature, in the atmosphere.
Public/Granted literature
- US20100151657A1 METHOD OF IMPROVING INTRINSIC GETTERING ABILITY OF WAFER Public/Granted day:2010-06-17
Information query
IPC分类:
