Semiconductor device having electrode and manufacturing method thereof

Invention Grant

US07939448B2 Semiconductor device having electrode and manufacturing method thereof 失效

Title translation: 具有电极的半导体装置及其制造方法

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Patent Title: Semiconductor device having electrode and manufacturing method thereof
Patent Title (中): 具有电极的半导体装置及其制造方法
Application No.: US12888995

Application Date: 2010-09-23
Publication No.: US07939448B2

Publication Date: 2011-05-10
Inventor: Tsutomu Okazaki , Motoi Ashida , Hiroji Ozaki , Tsuyoshi Koga , Daisuke Okada
Applicant: Tsutomu Okazaki , Motoi Ashida , Hiroji Ozaki , Tsuyoshi Koga , Daisuke Okada
Applicant Address: JP Kanagawa
Assignee: Renesas Electronics Corporation
Current Assignee: Renesas Electronics Corporation
Current Assignee Address: JP Kanagawa
Agency: McDermott Will & Emery LLP
Priority: JP2006-000141 20060104
Main IPC: H01L21/311
IPC: H01L21/311

Semiconductor device having electrode and manufacturing method thereof

Abstract:

A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film.

Abstract(Chinese):

半导体器件的制造方法包括：第一电极形成步骤，在控制栅电极和半导体衬底之间形成控制栅极电极，该控制栅电极在半导体衬底的表面上方，控制栅绝缘膜，形成存储节点绝缘膜，以及在存储节点绝缘膜的表面上形成存储栅电极的第二电极形成步骤。第二电极形成步骤包括在存储节点绝缘膜的表面上形成存储栅极电极层的步骤，在表面上形成蚀刻速率慢于存储栅电极层的蚀刻速率的辅助膜的步骤的存储栅电极层和对存储栅电极层和辅助膜进行各向异性蚀刻的步骤。

Public/Granted literature

US20110014783A1 SEMICONDUCTOR DEVICE HAVING ELECTRODE AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-01-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀