Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12480740Application Date: 2009-06-09
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Publication No.: US07939831B2Publication Date: 2011-05-10
- Inventor: Aya Anzai , Junya Maruyama
- Applicant: Aya Anzai , Junya Maruyama
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2002-365566 20021217
- Main IPC: H01L25/13
- IPC: H01L25/13 ; H01L25/075

Abstract:
It is provided a contacting method when a plurality of films to be peeled are laminating. Reduction of total layout area, miniaturization of a module, weight reduction, thinning, narrowing a frame of a display device, or the like can be realized by sequentially laminating a plurality of films to be peeled which are once separately formed over a plastic film or the like. Moreover, reliable contact having high degree of freedom is realized by forming each layer having a connection face of a conductive material and by patterning with the use of a photomask having the same pattern.
Public/Granted literature
- US20090250703A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-10-08
Information query
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